Jul 3, 2022 10:52
1 yr ago
23 viewers *
French term

région de canal contrainte en tension

French to English Tech/Engineering Engineering (general) in a patent
contexte:
* 1. Dispositif semiconducteur du type silicium sur isolant


** Dispositif selon l’une des revendications précédentes, dans lequel ledit au moins un transistor NMOS comporte une région de canal contrainte en tension (STRN), dans le film semiconducteur respectif (FLMn), et ledit au moins un transistor PMOS comporte une région de canal contrainte en compression (CMPR), dans le film semiconducteur respectif (FLMp).
Proposed translations (English)
3 +2 region of the channel under tensile strain
Change log

Jul 3, 2022 12:00: writeaway changed "Field (write-in)" from "(none)" to "in a patent"

Proposed translations

+2
7 mins
Selected

region of the channel under tensile strain

With a FET, the 'canal' is the 'channel'
This would appear to be mechanical tension / compression — though the reason for this is not immediately apprent.
Depending on the physical configuration, it might also be 'area' — but we do indeed talk about 'regions' in this context.
Note from asker:
thank you i agree
Peer comment(s):

agree José Patrício : a constraint in compression can be exerted on the channel area - https://patents.google.com/patent/FR2979482A1/en
50 mins
Thanks, José!
agree philgoddard : Strained channel region (try Googling it). And it increases electron mobility, apparently.
56 mins
Thanks, Phil! Perhaps related in some way with the piezoelectric effect...?
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